M29W400DT-SSN6 - [ M29W400DT-SSN6 (A3) ]
Digital IC Shop
M29W400DT-SSN6 - [ M29W400DT-SSN6 (A3) ]
1,000Ft
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block)
3 V supply Flash memory
Features
■ Supply voltage
– VCC = 2.7 V to 3.6 V for Program, Erase
and Read
■ Access time: 45, 55, 70 ns
■ Programming time
– 10 µs per byte/word typical
■ 11 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 8 main blocks
■ Program/Erase controller
– Embedded byte/word program algorithms
■ Erase Suspend and Resume modes
– Read and Program another block during
Erase Suspend
■ Unlock bypass program command
– Faster production/batch programming
■ Temporary block unprotection mode
■ Low power consumption
– Standby and Automatic Standby
■ 100,000 Program/Erase cycles per block
■ Electronic signature
– Manufacturer code: 0020h
– Top device code M29W400DT: 00EEh
– Bottom device code M29W400DB: 00EFh
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4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block)
3 V supply Flash memory
Features
■ Supply voltage
– VCC = 2.7 V to 3.6 V for Program, Erase
and Read
■ Access time: 45, 55, 70 ns
■ Programming time
– 10 µs per byte/word typical
■ 11 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 8 main blocks
■ Program/Erase controller
– Embedded byte/word program algorithms
■ Erase Suspend and Resume modes
– Read and Program another block during
Erase Suspend
■ Unlock bypass program command
– Faster production/batch programming
■ Temporary block unprotection mode
■ Low power consumption
– Standby and Automatic Standby
■ 100,000 Program/Erase cycles per block
■ Electronic signature
– Manufacturer code: 0020h
– Top device code M29W400DT: 00EEh
– Bottom device code M29W400DB: 00EFh
The product data sheet can be downloaded by clicking here