AT49LV1614A-70TI - [ AT49LV1614A-70TI (A4) ]
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AT49LV1614A-70TI - [ AT49LV1614A-70TI (A4) ]
1,500Ft
16-megabit
(1M x 16/2M x 8)
3-volt Only
Flash Memory
Features
• Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)
• Access Time – 70 ns
• Sector Erase Architecture
– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
• Fast Word Program Time – 20 µs
• Fast Sector Erase Time – 300 ms
• Dual-plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Eight 4K Word and Seven 32K Word Sectors
Memory Plane B: Twenty-four 32K Word Sectors
• Erase Suspend Capability
– Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
• Low-power Operation
– 30 mA Active
– 10 µA Standby
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
• VPP Pin for Accelerated Program/Erase Operations
• RESET Input for Device Initialization
• Sector Lockdown Support
• TSOP and CBGA Package Options
• Top or Bottom Boot Block Configuration Available
• 128-bit Protection Register
Description
The AT49BV/LV16X4A(T) is a 2.65- to 3.3-volt 16-megabit Flash memory organized
as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data
appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided
into 39 sectors for erase operations. The device is offered in 48-lead TSOP and
48-ball CBGA packages. The device has CE and OE control signals to avoid any bus
contention. This device can be read or reprogrammed using a single 2.65V power
supply, making it ideally suited for in-system programming.
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16-megabit
(1M x 16/2M x 8)
3-volt Only
Flash Memory
Features
• Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)
• Access Time – 70 ns
• Sector Erase Architecture
– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
• Fast Word Program Time – 20 µs
• Fast Sector Erase Time – 300 ms
• Dual-plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Eight 4K Word and Seven 32K Word Sectors
Memory Plane B: Twenty-four 32K Word Sectors
• Erase Suspend Capability
– Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
• Low-power Operation
– 30 mA Active
– 10 µA Standby
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
• VPP Pin for Accelerated Program/Erase Operations
• RESET Input for Device Initialization
• Sector Lockdown Support
• TSOP and CBGA Package Options
• Top or Bottom Boot Block Configuration Available
• 128-bit Protection Register
Description
The AT49BV/LV16X4A(T) is a 2.65- to 3.3-volt 16-megabit Flash memory organized
as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data
appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided
into 39 sectors for erase operations. The device is offered in 48-lead TSOP and
48-ball CBGA packages. The device has CE and OE control signals to avoid any bus
contention. This device can be read or reprogrammed using a single 2.65V power
supply, making it ideally suited for in-system programming.
The product data sheet can be downloaded by clicking here